Alpha Sintered Silicon Carbide SIC Roller with Pressure-less

Yufeng SonotekSic® Sintered Silicon Carbide (SSiC)   is pressure-less, sintered form of alpha silicon carbide, with very fine grain structure (4-10 microns) and contains no free silicon.

it is made of  pure sub-micron SiC powder with non-oxide sintering aids. forming by extrusion, dry pressing or isostatic pressing, sintered under high temperature of 2,200°C in an inert gas atmosphere.

SonotekSic®  SiC provides a full range of exceptional properties makes it an ideal material for high temperature resistant components:, Lightweight, dense, almost as hard as diamond, resistant to wear.

High  mechanical strength 

The bending strength is four times that of recrystallized silicon carbide, twice that of nitride bonded silicon carbide, and 50% higher than that of reaction bonded silicon carbide.

Excellent thermal shock resistance

Due to the excellent thermal conductivity, consistently low thermal expansion coefficient and minimizing internal temperature gradient, Sonoteksic® sintered silicon carbide  has excellent thermal shock resistance and can be more adaptable to the rapid heat cycling than other materials.

Super high temperature stability

SonotekSic® sintered silicon carbide hardly change with temperature, from close to absolute zero up to 1700°C even under load, that is not suitable for other materials.

Excellent oxidation resistance

SonotekSic® sintered  SiC is more stable in long term applications because it is more oxidation resistant for its high purity and high density. A protective layer of SiO2 is formed on the surface of SiC which slows the oxidation process, which can extend the life of the product.

Extremely universal high corrosion resistance in acidic, alkali, basic media and oxidants -even at high temperatures.

Kinds of shape  available  

Rollers · Tubes · Beam · Batts · Seals · Crucible · Wear Pans · Wear Rings 

(With high technology  Presureless sintered keep each shpae with accute  dimension control  )

Typical physical properties of four comparative SiC materials